具体描述
基本信息
书名:(全英文)半导体纳米材料在太赫兹电场中的特性沈韬
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售价：24.5元,便宜11.5元,折扣68
作者:沈韬
出版社：冶金工业出版社
出版日期：2014-03-01
ISBN：9787502461614
字数：
页码：
版次：1
装帧：平装
开本：16开
商品重量：0.4kg
编辑推荐
内容提要
本书系统详尽地介绍了半导体基础纳米结构在太赫兹电场中的响应特性、空间载流子受激运动机理、解析及快速分析的方法。涵盖了半导体基础理论，载流子输运方程分析、有限元数值方法解析、等效电路分析方法等内容。《半导体纳米材料在太赫兹电场中的特性(英文版)》由沈韬编著。
目录
1 Introduction
References
2 Theoretical Framework
2.1 Electromagic Field Theory
2.2 Brief Review on Related Semiconductor Physics
2.2.1 Energy band theory
2.2.2 Carrier concentration at thermal equilibrium
2.3 Charge Transport in Semiconductor
References
3 Semiconductor Nanostructure in the Static Electric Field
3.1 Semiconductor Nanoplate in the Static Field
3.2 Semiconductor Nanoparticle in the Static Field
4 Response of Elementary Semiconductor Nanostructures in Quasi-Static Electric Field
4.1 Carrier Dynamics
4.2 Semiconductor Nanoplate in the Quasi-Static Field
4.3 Semiconductor Nanoparticle in the Quasi-Static Field
References
5 Full Wave Analysis
5.1 Full Wave Analysis of a Semiconductor Nanoparticle
5.2 Response of Semiconductor Nanoparticle with High Doping Level in Dynamic Field
6 Equivalent Circuit Representation for Conductive Nanostructure
6.1 Basic Concepts of Equivalent Circuit
6.2 Equivalent Circuit Representation for the Semiconductor Nanoplate
6.3 Equivalent Circuit Representation for the Semiconductor Nanoparticle
6.4 Equivalent Circuit Representation for the Metal Nanoparticle
References
7 Conclusion
7.1 Summary
7.2 Suggestions for Future Work
Appendix A
Appendix B
作者介绍
文摘
序言
Novel Explorations in Terahertz Spectroscopy and Quantum Dots: A Material Science Perspective This monograph delves into the intricate interplay between novel semiconductor nanostructures and the application of terahertz (THz) electromagnetic fields, offering a comprehensive exploration of their unique physical properties and potential technological breakthroughs. Moving beyond conventional material characterization, this work focuses on meticulously engineered quantum dot (QD) systems, specifically silicon and germanium based, as a platform for understanding and harnessing complex THz interactions. The research presented here bridges fundamental condensed matter physics with cutting-edge material science, aiming to provide a detailed understanding of how quantum confinement and surface effects within these nanostructures dictate their response to THz radiation. The initial chapters lay a robust theoretical and experimental groundwork. A thorough review of THz spectroscopy techniques, from time-domain (THz-TDS) to frequency-domain (THz-FDS) methods, is presented, highlighting their strengths and limitations in probing nanoscale phenomena. Emphasis is placed on advanced spectroscopic approaches, including pump-probe spectroscopy and coherent control experiments, designed to unravel the ultrafast dynamics of charge carriers and excitations within semiconductor nanostructures. The theoretical framework draws upon quantum mechanical principles governing carrier behavior in confined geometries, incorporating concepts such as effective mass approximation, band structure modifications due to quantum confinement, and the role of dielectric mismatch at material interfaces. Detailed discussions on the selection rules for THz transitions within QDs, considering their specific symmetry and dimensionality, are provided. A significant portion of the monograph is dedicated to the synthesis and characterization of tailored silicon and germanium quantum dots. The authors meticulously describe various top-down and bottom-up fabrication techniques, including ion implantation, colloidal synthesis, and epitaxial growth methods. Each fabrication route is critically assessed for its ability to control QD size, shape, composition, and surface passivation, as these parameters are paramount in dictating THz optical properties. Advanced characterization techniques, such as high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), are employed to verify the structural integrity and surface chemistry of the synthesized QDs. Furthermore, the importance of precise size and shape control is underscored by theoretical calculations predicting distinct THz absorption and emission signatures for different QD morphologies. The core of the research lies in the investigation of THz field interactions with carrier populations within these nanostructures. The monograph presents in-depth analyses of intraband and interband transitions in silicon and germanium QDs under THz irradiation. For silicon QDs, particular attention is paid to the unique electronic band structure, characterized by indirect bandgaps, and how quantum confinement influences the effective bandgap and optical transitions in the THz range. The authors explore the possibility of engineering THz absorption cross-sections through careful control of QD size and the introduction of specific dopants. Similarly, for germanium QDs, the direct bandgap nature and the presence of lighter and heavier holes are discussed in relation to their THz response. The influence of strain engineering, often inherent in QD growth processes, on the THz optical properties is also meticulously investigated. Beyond simple absorption, the monograph explores more sophisticated THz phenomena. This includes a detailed examination of carrier dynamics, such as photoexcitation and relaxation processes, mediated by THz pulses. The temporal evolution of carrier populations, their scattering mechanisms, and the lifetimes of excited states are probed using ultrafast THz spectroscopy. The role of phonons – both confined and interface phonons – in mediating energy relaxation and decoherence is extensively studied, offering insights into the quantum nature of carrier interactions within the nanostructure. The authors present novel findings on phonon-assisted THz absorption and emission, highlighting their dependence on QD size and strain. A key innovation presented is the exploration of THz-induced non-linear optical effects in these nanostructures. The monograph investigates phenomena such as harmonic generation, four-wave mixing, and saturable absorption in the THz regime. These non-linear responses are crucial for developing advanced optical switching and signal processing applications. The authors present experimental evidence and theoretical models explaining the origin of these non-linearities, attributing them to the strong confinement of carriers and the resulting modification of their dielectric response under intense THz fields. The dependence of these non-linearities on QD size distribution, surface defects, and carrier density is systematically analyzed. The work also extends to the investigation of collective phenomena within assemblies of semiconductor QDs. The influence of inter-dot coupling and plasmonic effects on the THz optical response is explored. For instance, the authors discuss how the arrangement and proximity of QDs can lead to enhanced THz absorption or the emergence of collective modes. This opens avenues for designing metamaterials and other nanostructured composites with tunable THz properties. The role of substrate effects and encapsulation layers in modifying the THz response of QD films is also addressed, providing practical considerations for device fabrication. Furthermore, the monograph provides a comprehensive overview of the potential applications of THz-active semiconductor nanostructures. This includes discussions on THz detectors, modulators, emitters, and sensors. The ability to engineer the THz spectral response and carrier dynamics of QDs makes them promising candidates for high-performance THz optoelectronic devices. Specific examples of envisioned applications include non-destructive imaging, security screening, chemical and biological sensing, and advanced telecommunications. The authors emphasize the advantages offered by semiconductor QDs, such as room-temperature operation, high sensitivity, and the potential for integration with existing semiconductor technologies. Finally, the monograph concludes with a forward-looking perspective on future research directions. This includes exploring novel QD materials, such as III-V semiconductors and 2D materials, for THz applications, as well as investigating more complex QD architectures, such as core-shell structures and vertically aligned arrays. The potential for exploiting quantum entanglement and topological properties in THz nanophotonic devices is also briefly touched upon. The authors highlight the critical need for further advancements in fabrication techniques for achieving even greater control over QD properties and for developing efficient coupling mechanisms between QDs and THz fields. The challenges associated with scaling up production and integrating these nanostructures into functional devices are also acknowledged, paving the way for future innovations in the field of THz science and technology.
